K9F2G08U0M DATASHEET PDFK9F2G08U0M DATASHEET PDF

K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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The Erase Confirm command D0h following the block address loading initiates the internal erasing process. For this reason, two bit ECC is recommended for copy-back operation. Optical Inspection Equipment AA The number of valid blocks is presented with both cases of invalid blocks considered.

(PDF) K9F2G08U0M Datasheet download

Buffer memory of the controller. The words other than those to be programmed do not need to be loaded. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

The memory array is made up of 32 cells that are datawheet connected to form a NAND structure. Data 1 Data 64 Ex. This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design.

K9F2G08U0M-PCB0 | SAMSUNG | DATASHEET | PHOTO

When the device is in Busy state during random read, program or erase mode, the reset datasyeet will abort these operations.

Once the data in a page is loaded into the data registers, they may be read out in 50ns 30ns in K9F2G08U0M only cycle time by sequentially pulsing RE.

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Only the Read Status command and Reset command are valid while programming is in progress. The addressing should be done in sequential order in a block. Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block.

Recent History What is this? A recovery time of minimum 10? The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array X8 device: Random data output can be operated multiple times regardless of how many times it is done in a page. A read operation with “35h” command and the address of the source page moves the whole byte X8 device or word X16 device data into the internal data dahasheet.

In Block Erase operation, however, only the three row address cycles are used. The repetitive high to low transitions of the RE clock make the device k9f2g008u0m the data starting from the selected column address up to the last column address. The bytes X8 device or words X16 device of data datasheey the selected page are transferred to the data registers in less than 25? K9f2g08y0m, address and data are latched on the rising edge of the WE pulse.

Block address loading is accomplished dayasheet three cycles initiated by an Erase Setup command 60h.

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Additional invalid blocks may develop while being used. A program operation can be performed in typical ? Page 35 Draft Date Sep. The said additional block failure rate does not include those reclaimed blocks.

The program performance may be dramatically improved by cache program when there are lots of pages of data to be programmed. Two types of operations are available: Datasyeet program ddatasheet results in an error, map out the block including the page in error and copy the target data to another block.

Some commands require one bus cycle. The programming of the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of data from cache registers.

Devices with invalid block s have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An internal voltage detector disables all functions whenever Daatasheet is below about 1. Invalid blocks are defined as blocks that contain one or more bad bits. The random read mode is enabled when the page address is changed. Random page address programming is prohibited.

It returns to high when the internal controller has finished the operation. Any intentional erasure of the original invalid block information is prohibited.

Cycle 00h 00h 90h FFh 80h 80h 85h 60h 85h 05h 70h 2nd.